Emission Properties of Nanocrystalline Silicon based Metal-oxide-semiconductor Cathode Arrays

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  • KIDA Yo
    Graduate School of Engineering, Hachinohe Institute of Technology
  • SHIMAWAKI Hidetaka
    Graduate School of Engineering, Hachinohe Institute of Technology
  • NEO Yoichiro
    Research Institute of Electronics, Shizuoka University
  • MIMURA Hidenori
    Research Institute of Electronics, Shizuoka University
  • MURAKAMI Katsuhisa
    Center for Quantum Science and Technology under Extreme Conditions, Osaka University
  • WAKAYA Fujio
    Center for Quantum Science and Technology under Extreme Conditions, Osaka University
  • TAKAI Mikio
    Center for Quantum Science and Technology under Extreme Conditions, Osaka University

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Other Title
  • nc-Si MOSカソードの電子放射特性(発光型/非発光型ディスプレイ合同研究会)
  • nc-Si MOSカソードの電子放射特性
  • nc Si MOS カソード ノ デンシ ホウシャ トクセイ

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Abstract

Metal-oxide-semiconductor (MOS) cathode arrays based on nanocrystalline silicon covered with a thin oxide film prepared by a pulsed laser ablation technique have been fabricated and their emission properties have been investigated. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and was relatively stable. We observed the emission image on the phosphor screen and the emission divergence was estimated to be less than 3°.

Journal

  • ITE Technical Report

    ITE Technical Report 33.5 (0), 57-60, 2009

    The Institute of Image Information and Television Engineers

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