Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors

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  • 超高速および高電圧イメージセンサのデバイス・シミュレーション(固体撮像技術および一般)
  • 超高速および高電圧イメージセンサのデバイス・シミュレーション
  • チョウコウソク オヨビ コウデンアツ イメージセンサ ノ デバイス ・ シミュレーション

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Abstract

Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are reported. In the analyses of ultrahigh-speed image sensors, propagation of the electromagnetic field induced by electrodes cannot be ignored. To obtain consistent basic equations for both the device and electromagnetic field propagation simulations, we introduce a charge creation-annihilation field, which is almost equivalent to the Nakanishi-Lautrup field of quantum electrodynamics. To perform current analyses for high-voltage image sensors with applied voltages of >35 V, we adopt quad precision numbers for all parameters. The models, algorithms, and some computational results are reported.

Journal

  • ITE Technical Report

    ITE Technical Report 40.12 (0), 45-48, 2016

    The Institute of Image Information and Television Engineers

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