11-6 Buried Photodiode Structure for High Speed Charge Transfer

Bibliographic Information

Other Title
  • 11-6 高速電荷転送のための埋め込みフォトダイオード構造の検討(第11部門 情報センシング1)

Description

This paper presents a new type of buried photodiode structure for high speed charge transfer .The structure has stepwise n layer and p-well layer.They generate a fringing field in buried photodiode. Fringing field distributions and charge transfer characteristics of the structure are investigated with simulations.

Journal

Details 詳細情報について

  • CRID
    1390001204556583936
  • NII Article ID
    110009469858
  • DOI
    10.11485/iteac.2008.0__11-6-1_
  • ISSN
    24242292
    13431846
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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