Electro-Thermal Simulation of Microwave GaN FET Fast-Switching Power Supply

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  • Hiura Shigeru
    Graduate School of Information and Engineering, The University of Electro-Communications
  • Ishikawa Ryo
    Graduate School of Information and Engineering, The University of Electro-Communications

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Other Title
  • マイクロ波GaN FET高速スイッチング電源の熱・電気連成シミュレーション
  • マイクロハ GaN FET コウソク スイッチング デンゲン ノ ネツ ・ デンキレンセイシミュレーション

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Description

An electro-thermal simulation for a microwave gallium nitride (GaN) field-effect transistor (FET) high-speed-switching power-supply was carried out to precisely estimate the influence of the self-heating effect on high-power operation. In this simulation, significant differences in the output power, power efficiency, and operation temperature of the FET were confirmed in comparison with calculated results for a simplified ideal model, when the switching frequency was changed from 10 MHz to several GHz, especially at the higher frequency range. For pulse-width modulation switching, the maximum variation of the operation temperature according to the output voltage variation was obtained at a center frequency of 2.5 MHz, which was about 44% of the relative temperature variation relative to the average temperature increase.

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