Influence of Crystallographic Structure on Etching Rate of Copper by Using Ammonium Peroxodisulfate Solution

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  • Kubota Kenji
    Graduate School of Engineering, Utsunomiya University Central Research Institute, Mitsubishi Materials Corporation
  • Niiyama Takashi
    Graduate School of Engineering, Utsunomiya University
  • Matsumoto Katsutoshi
    Department of Chemical and Biological Engineering, Hachinohe National College of Technology
  • Yoshihara Sachio
    Graduate School of Engineering, Utsunomiya University

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  • ペルオキソ二硫酸アンモニウム溶液を用いた銅のエッチングレートに結晶構造が及ぼす影響
  • ペルオキソニ硫酸アンモニウム溶液を用いた銅のエッチングレートに結晶構造が及ぼす影響
  • ペルオキソニ リュウサン アンモニウム ヨウエキ オ モチイタ ドウ ノ エッチングレート ニ ケッショウ コウゾウ ガ オヨボス エイキョウ

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Abstract

The influence of crystallographic structure on the etching rate of copper was studied in 1 mol/dm3 ammonium peroxodisulfate solution using a scanning probe microscope (SPM), electron back scatter diffraction patterns (EBSD), and corrosion potential measurements. The (001), (101), and (111) faces etched at slower rates than the (327) and (425) faces, which have higher Miller indices. The etching rate of the (001) or (101) oriented polycrystalline copper was approximately half that for the oriented polycrystalline copper with higher indices. The polycrystalline copper etched at highly rate showed a relatively noble corrosion potential. It was suggested that the etching rate of polycrystalline copper was controlled by the mean value of the reduction kinetics of the peroxodisulfate ion on each of the grain surfaces.

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