Facet-Selective Growth Rates of Doped Diamond Crystals Prepared by Microwave Plasma-Assisted Chemical Vapor Deposition.
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- Kusakabe Katsuki
- Department of Applied Chemistry, Kyushu University
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- Sobana Akira
- Department of Applied Chemistry, Kyushu University
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- Taniguchi Hirotomo
- Department of Applied Chemistry, Kyushu University
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- Sotowa Ken-Ichiro
- Department of Applied Chemistry, Kyushu University
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- Tsubota Toshiki
- Material Development Department, Kumamoto Industrial Research Institute
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Abstract
In order to produce a highly oriented diamond layer on a silicon (100) substrate, reaction conditions should be controlled so as to achieve an initial selective growth on the (111) face, followed by the (100) face. In the present study, cubo-octahedral diamond crystals were formed by the microwave plasma-assisted chemical vapor deposition of methane and hydrogen on a silicon (100) wafer. Trimethylboron and dimethylsulfur as the boron or sulfur sources, respectively, were added to the gas phase and diamond was homoepitaxially deposited on the {100} and {111} of the crystals. The growth rate determined from geometrical changes in the crystals, was affected by the type of diamond faces used, the boron to carbon (B/C) and sulfur to carbon (S/C) ratios in the gas phase, the methane concentration, and the substrate temperature. The growth rate decreased with increasing B/C and S/C ratios, but the relative growth rate of [100] to [111] remained nearly independent of the dopant concentration. The [111] preferred growth was realized under lower methane concentrations and higher substrate temperatures.
Journal
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- JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
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JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 35 (10), 996-1000, 2002
The Society of Chemical Engineers, Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390001204566502528
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- NII Article ID
- 10010020271
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- NII Book ID
- AA00709658
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- COI
- 1:CAS:528:DC%2BD38Xotlahtrw%3D
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- ISSN
- 18811299
- 00219592
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- NDL BIB ID
- 6336389
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed