Role of the Surface N–H Molecular Layer in High Quality In-RICH InGaN Growth by MOVPE
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- Yayama Tomoe
- Department of Aeronautics and Astronautics, Kyushu University
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- Kangawa Yoshihiro
- Department of Aeronautics and Astronautics, Kyushu University Research Institute for Applied Mechanics, Kyushu University
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- Kakimoto Koichi
- Department of Aeronautics and Astronautics, Kyushu University Research Institute for Applied Mechanics, Kyushu University
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抄録
This study theoretically investigates the influence of the growth orientation on In incorporation during metal-organic vapor phase epitaxy (MOVPE) growth. We propose a new theoretical model based on first-principles calculations that show the role of the N–H molecular layer on In incorporation. Under MOVPE growth conditions, III-nitride surfaces terminated by N–H molecular layers are stable. The N–H layer that covers the In atomic layer prevents In atom desorption and is replaced by Ga atoms. In incorporation is, therefore, more efficient for higher N–H layer coverage and stability. To investigate this relationship, calculation of the enthalpy change for the decomposition of an N–H molecular layer was performed. To take into account the experimental conditions, temperature dependence of surface reconstruction is considered. The trend of this enthalpy change depends on the growth orientation, which agrees well with the experimental In composition.
収録刊行物
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- JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
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JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 47 (7), 615-619, 2014
公益社団法人 化学工学会
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詳細情報 詳細情報について
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- CRID
- 1390001204567468672
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- NII論文ID
- 130004056952
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- NII書誌ID
- AA00709658
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- ISSN
- 18811299
- 00219592
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- NDL書誌ID
- 025602384
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可