書誌事項
- タイトル別名
-
- Thermal Properties of Conduction Current and Carrier Behaviors in Organic Electroluminescent Device
- ユウキ EL ソシ ニ オケル デンキ デンドウ ノ オンド トクセイ ト キャリア キョドウ
この論文をさがす
抄録
Organic Electroluminescent device (OLED) was fabricated using a vacuum evaporation method and thermal properties were investigated. The OLED has an Indium Tin Oxide (ITO)/ N,N'-diphenyl-N,N'- bis(3-methylphenyl) 1- 1'biphenyl- 4,4'-diamine (TPD)/ tris- (8-hydroxyquinoline) aluminum (Alq)/ Lithium fluoride (LiF)/ aluminum (Al) structure. An electron dominant device of an Al/ Alq/ LiF/ Al structure, or a hole dominant device of an ITO/ TPD/ Al structure was also fabricated in order to study the carrier behavior in the OLEDs. The current density vs. voltage (J-V) properties with various thickness of organic layers were investigated in the both electron and hole dominant devices, and the thermal dependence of J-V properties was observed in the devices. At room temperature, conductions in large current region were considered to be due to space-charge-limited current for all the devices. Especially, for the Al/ Alq/ LiF/ Al device and the OLED, J∝Vm+1 relationships were observed across wide current region. At low temperature, tunnel currents were estimated for the ITO/TPD/Al device. For the Al/ Alq/ LiF/ Al device and the OLED, J∝Vm+1 relationships were observed across wide current region at low temperature.
収録刊行物
-
- 電気学会論文誌． Ａ
-
電気学会論文誌． Ａ 127 (10), 635-641, 2007
一般社団法人 電気学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204594716416
-
- NII論文ID
- 10019959289
-
- NII書誌ID
- AN10136312
-
- ISSN
- 13475533
- 03854205
-
- NDL書誌ID
- 8959991
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可