Polarization reversal switching kinetics of pulsed laser deposited PZT/YBCO/MgO heterostructure thin films.

DOI Web Site Web Site 1 Citations 19 References

Bibliographic Information

Other Title
  • PLD法により作製したPZT/YBCO/MgOヘテロ構造薄膜の分極反転機構
  • PLDホウ ニ ヨリ サクセイ シタ PZT YBCO MgO ヘテロ コウゾウ ハクマク ノ ブンキョク ハンテン キコウ

Search this article

Abstract

We have fabricated epitaxial PbZr0.52Ti0.48O, (PZT)/YBa2Cu3O7-x (YBCO) films (ferroelectric/superconductor/heterostructures) on the single-crystal MgO substrates by a KrF pulsed laser deposition technique. The heterostructure has high electric resistivity p (at 150 kV/cm) of 4×1011 Ω•cm, dielectric permittivity of 820 and loss tan δ of 0.04, remnant polarization of 32μC/cm2 and coercive field of 41kV/cm. Film thickness dependence of the coercive electric field over the thickness range 0.04-1.2μm is in close agreement with prolate ellipsoid nucleus model proposed by Kay and Dunn. Switching property of the fabricated epitaxial PZT thin films corresponds to ferroelectric needle-like nucleus growth.

Journal

Citations (1)*help

See more

References(19)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top