Etching Characteristics of Fabricated Grooves on Silicon Solar Cell using Surface Discharge Plasma

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  • Hamada Toshiyuki
    Department of Materials and Informatics, Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki
  • Sakoda Tatsuya
    Department of Electrical and Electronic Engineerign, Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki

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説明

A buried contact is one of effective techniques to improve the efficiency of solar cells. However, the etching of the patterned front contact on the surface of a solar cell is required. Therefore, we proposed a maskless etching technique using the surface discharge plasma operated at atmospheric pressure. The streamer-like discharge channels, which ignited near a triple junction point between the quartz glass layer, the solar cell, and the gas space, played an essential role in the etching. The etching rate of a silicon solar cell of which the surface had randomly distributed pyramid-like structures, was in the range of 3 - 5 μm /min when the applied voltage was 4.0 kV.

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