Effect of Anisotropic Incidence and Atomic Arrangement of CoFe System Magnetic Thin Films for the GHz Frequency in the Carousel Sputtering Method

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  • カルーセルスパッタ法で作製したＣｏＦｅ系ＧＨｚ帯磁性薄膜の異方性入射効果と原子配列
  • カルーセルスパッタホウ デ サクセイ シタ CoFeケイ GHz タイジセイ ハクマク ノ イホウセイ ニュウシャ コウカ ト ゲンシ ハイレツ

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To increase the uniaxial- magnetic anisotropy in thin-film materials is the key issue for the micro-magnetic devices driven in a GHz frequency. It is known that an especially large uniaxial- magnetic anisotropy was induced only by the carousel sputtering method. In this paper, an atomic deposition process of the CoFeB and CoFe films were analyzed by using simulation of Kinetic Theory of Gases. The result exhibited that the sputtered particles had remarkably anisotropic incidence to the substrate leading to different atomic distances with respect to the incident direction, which results in a magnetic elastic effect. These sputtered particles with the anisotropic incidence give rise to a main cause of the higher uniaxial- magnetic anisotropy of the films.

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