エキシマレーザ,γ線,および機械的応力による非晶質SiO<sub>2</sub>中の常磁性中心の生成機構

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  • The formation mechanisms of paramagnetic defect centers induced by excimer lasers, γ rays, and mechanical fracturing in amorphous SiO<sub>2</sub>
  • エキシマレーザ,γ線,および機械的応力による非晶質SiO2中の常磁性中心の生成機構
  • エキシマ レーザ ガンマセン オヨビ キカイテキ オウリョク ニヨル ヒショウ
  • The formation mechanisms of paramagnetic defect centers induced by excimer lasers, &gamma; rays, and mechanical fracturing in amorphous SiO<sub>2</sub>

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The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects, is examined. Mechanism of laser or γ ray induced paramagnetic defect centers is compared with that of fracture induced ones.

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