シリコンボライドの熱電特性に及ぼす相組成および微細構造の影響

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  • Effect of phase composition and microstructure to thermoelectric property of silicon borides
  • シリコン ボライド ノ ネツデン トクセイ ニ オヨボス ソウ ソセイ オヨビ

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Phase relations of silicon-boron system in boron-rich region were studied by solid state reaction, and the boron-rich silicon boride specimens were prepared by arc-melting and spark plasma sintering. Rhombohedral SiBn(n=15-49) single phase and mixtures of SiB6 and SiBn were observed in the region B=93.7-98at% and B=86-93.7at%, respectively. The arc-melted specimens consisted of SiBn and free Si, while no free silicon was observed in the plasma sintered specimen. The thermoelectric properties of the plasma sintered and arc-melted specimens were studied. The effects of the phase composition and microstructure on the thermoelectric properties were discussed. The thermoelectric figure of merit values (ZT) of the silicon borides increased with increasing temperature. The plasma sintered silicon boride containing 90at%B showed the largest ZT value, which reached 0.2 at 1100K.

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