The Study of the Sensitizing of EUV Resist
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- Sekiguchi Atushi
- Litho Tech Japan Corp.
Bibliographic Information
- Other Title
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- EUVレジストの高感度化の検討
- EUV レジスト ノ コウカンドカ ノ ケントウ
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Abstract
<p>Studies have been carried out on developing a method for improving EUV resist sensitivity by enhancing EUV light absorption through the addition of metals having high EUV light absorption to the resist polymer in order to increase secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency(1)-(3). To confirm whether the addition of metals having high EUV light absorption actually does enhance sensitivity, study efforts included transmittance measurements and sensitivity evaluations of resist samples doped with ZrO2 or TeO2 nanoparticles, which have low and high EUV light absorption, respectively, in molar quantities of 0-2 relative to PAG. The samples were subjected to EUV exposure at the NewSUBARU synchrotron radiation facility. While the ZrO2-doped resist showed no evident enhancement of sensitivity or transmittance, the TeO2-doped resist showed enhancement in both properties. Based on these results, we confirmed that the addition of metals having high EUV light absorption to the EUV resist enhances its EUV light absorption and increases secondary electron emission, thereby enhancing PAG reactivity and improving acid generation efficiency.</p>
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 137 (5), 242-245, 2017
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204600495232
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- NII Article ID
- 130005631925
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 028209282
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
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- CiNii Articles
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- Abstract License Flag
- Disallowed