Dislocation Morphology and Crystalline Mosaicity in Strain-Relaxed SiGe Buffer Layers on SOI
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- Sakai Akira
- Graduate School of Engineering, Nagoya University
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- Taoka Noriyuki
- Advanced Industrial Science and Technology (AIST)
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- Nakatsuka Osamu
- EcoTopia Science Institute, Nagoya University
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- Ogawa Masaki
- Center for Cooperative Research of Advanced Science and Technology, Nagoya University
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- Zaima Shigeaki
- Graduate School of Engineering, Nagoya University
Bibliographic Information
- Other Title
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- ＳＯＩ基板上歪緩和ＳｉＧｅバッファ層の転位構造とモザイシティ
- SOI キバン ジョウ ヒズミ カンワ SiGe バッファソウ ノ テンイ コウゾウ ト モザイシティ
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Description
We have grown thin strain-relaxed SiGe buffer layers on silicon-on-insulator (SOI) substrates with pure-edge dislocation network at the SiGe/SOI interface. Dislocation morphology and crystalline mosaicity of the SiGe layers have been analyzed by X-ray diffraction two-dimensional reciprocal space mapping and transmission electron microscopy. It was found that dislocation propagation at the SiGe/SOI interface and resultant crystalline mosaicity of the SiGe layer are critically dependent on the thickness of SOI layer. Image force exerted on the dislocations accounts for this SOI thickness dependence.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 126 (9), 1083-1087, 2006
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204604020096
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- NII Article ID
- 10019289957
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 8080154
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed