Fabrication and Characterization of .BETA.-FeSi2 Thin Films Prepared by PLD Method Using Nd: YAG Laser

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  • Yasui Mitsuhiro
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • Aoki Takanori
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • Suzuki Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • Matsushita Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • Okuda Masahiro
    Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

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Other Title
  • Ｎｄ：ＹＡＧレーザを用いたＰＬＤ法によるβ‐ＦｅＳｉ２薄膜の作製と評価
  • Nd:YAGレーザを用いたPLD法によるβ-FeSi2薄膜の作製と評価
  • Nd YAG レーザ オ モチイタ PLDホウ ニ ヨル ベータ FeSi2 ハクマク ノ サクセイ ト ヒョウカ

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Abstract

β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabrication process, three targets of (a) Fe(5N), (b) FeSi2(3N) and (c) Fe(5N) + FeSi2(3N) were used. The β-FeSi2 thin films having best properties of crystallinity were obtained in the case of (c), in which the first layer as the template was formed with the target of Fe(5N) and then, on top of that, the second layer was deposited with the target of FeSi2(3N). At this time, it was found that by XRD measurement, the degree of crystallinity of the films of the case (c) in which the first layer was introduced as the template improved 1.4 times as much as compared with the case (a), and that by SEM and AFM observations, surface morphologies also improved. Moreover, it was found that by TEM obeservation, the β-FeSi2 thin grew uniformly along the direction of (220) or (202) from the interface of the Si substrate and the film to the free surface and that by EDS analysis, the compositions of Fe and Si were uniformly distributed.

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