書誌事項
- タイトル別名
-
- Fabrication and Characterization of .BETA.-FeSi2 Thin Films Prepared by PLD Method Using Nd: YAG Laser
- Nd:YAGレーザを用いたPLD法によるβ-FeSi2薄膜の作製と評価
- Nd YAG レーザ オ モチイタ PLDホウ ニ ヨル ベータ FeSi2 ハクマク ノ サクセイ ト ヒョウカ
この論文をさがす
抄録
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabrication process, three targets of (a) Fe(5N), (b) FeSi2(3N) and (c) Fe(5N) + FeSi2(3N) were used. The β-FeSi2 thin films having best properties of crystallinity were obtained in the case of (c), in which the first layer as the template was formed with the target of Fe(5N) and then, on top of that, the second layer was deposited with the target of FeSi2(3N). At this time, it was found that by XRD measurement, the degree of crystallinity of the films of the case (c) in which the first layer was introduced as the template improved 1.4 times as much as compared with the case (a), and that by SEM and AFM observations, surface morphologies also improved. Moreover, it was found that by TEM obeservation, the β-FeSi2 thin grew uniformly along the direction of (220) or (202) from the interface of the Si substrate and the film to the free surface and that by EDS analysis, the compositions of Fe and Si were uniformly distributed.
収録刊行物
-
- 電気学会論文誌C(電子・情報・システム部門誌)
-
電気学会論文誌C(電子・情報・システム部門誌) 124 (11), 2202-2207, 2004
一般社団法人 電気学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204604973824
-
- NII論文ID
- 10013713619
-
- NII書誌ID
- AN10065950
-
- ISSN
- 13488155
- 03854221
-
- NDL書誌ID
- 7136686
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可