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- Shiraishi Tadashi
- Department of Communications Engineering, Tokai University
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- Iida Masamori
- Department of Communications Engineering, Tokai University
書誌事項
- タイトル別名
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- Property of interface in In2O3/.ALPHA.-Se90Te10.
- Property of Interface in In2O3 a Se90Te
この論文をさがす
説明
An internal potential profile formed between In2O3 and a-Se90Te10 was investigated by using the Valence Alternation Pairs model and introducing degree of disorder for chalcogenide glasses. As the results, the potential barrier width formed on a-Se90Te10 was estimated whose value was larger than 4200Å. The value was experimantally obtained by using time of flight technique in qualitatively agreement with the theoretical calculation.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 104 (1), 24-27, 1984
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204605380352
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- NII論文ID
- 130003568922
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 2971350
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
