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Variability in Scaled MOS Transistors: Present Status and Measures
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- Hiramoto Toshiro
- Institute of Industrial Science, University of Tokyo MIRAI-Selete
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- Takeuchi Kiyoshi
- MIRAI-Selete
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- Nishida Akio
- MIRAI-Selete
Bibliographic Information
- Other Title
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- 増大する微細MOSトランジスタの特性ばらつき:現状と対策
- ゾウダイスル ビサイ MOS トランジスタ ノ トクセイ バラツキ ゲンジョウ ト タイサク
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Description
The present status of variability in characteristics of the state-of-the-art MOS transistors is presented. The statistics of threshold voltage of arrayed transistors show the normal distribution. Special emphasis is placed on the analysis of random threshold voltage fluctuations. A new method to compare the amount of random variations in different fabs and different technologies is proposed. Finally, the measures to the variability of scaled CMOS are discussed.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 128 (6), 820-824, 2008
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204606014336
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- NII Article ID
- 10021132489
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 9531720
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- Text Lang
- ja
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- Article Type
- journal article
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- Abstract License Flag
- Disallowed