Development of Millimeter-wave High Power GaN Amplifier Technology

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  • ミリ波帯GaN増幅器技術の発展
  • ミリ ハタイ GaN ゾウフクキ ギジュツ ノ ハッテン

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Abstract

This paper describes the first results on transmission performances of newly developed high power amplifier millimeter wave 3-stage GaN_MMICs (monolithic microwave integrated circuit) on a Si substrate and a small size wireless power amplifier module equipped with the GaN_MMIC. The high power type of GaN_MMIC and the voltage gain type are fabricated, and both MMICs show over 28-dBm output power at 38GHz band. The power amplifier module including the MMICs and bias circuits exhibits lower than -34dBc of adjacent channel leakage ratio at 25-dBm output power and QPSK-operation. Moreover, the power module exhibits 16QAM 600-Mbps transmission rate at 25-dBm output power.

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