書誌事項
- タイトル別名
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- Development of 1200V Level Shifter Devices on SOI for HVIC
- HVICヨウ SOIガタ 1200Vレベルシフト ソシ ノ カイハツ
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抄録
We have developed monolithic SOI type 1200V level shifters for inverter driver ICs, which are based on a new design concept of cascaded 120V LDMOSFETs. In order to clarify the problem of blocking voltage lowering against a high dV/dt surge, we have analyzed transient behavior of monolithically cascaded LDMOSFETs by numerical simulations and experiments. As a result, we have established a new design concept including device layouts and circuits, which minimizes breakdown voltage lowering at very high dV/dt of 20kV/μs. This concept is expected to be a key technology enabling 1200V SOI inverter driver ICs for harsh applications such as automotive electronics.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 133 (5), 930-936, 2013
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204608740864
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- NII論文ID
- 130003363315
- 10031166972
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 024670105
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可