Growth of Single-crystal Silicon Semiconductor under High Magnetic-field Conditions.

DOI Web Site 2 Citations 23 References

Bibliographic Information

Other Title
  • 強磁場中での半導体シリコン単結晶の製造
  • キョウジバチュウ デ ノ ハンドウタイ シリコン タンケッショウ ノ セイゾウ

Search this article

Description

Most of the large-scale integrated circuits (LSIs), indispensable at present day, are made from Si wafers grown by Czochralski (CZ) method. The size of LSIs continues to grow with the integration of more devices. The diameter of Si crystal has also been increasing to enable the production of large-size LSIs with practical productivity and cost. Generally, a large-diameter crucible is used to produce large single-crystal silicon with practical productivity. However, it is becoming difficult to control the convection of large amounts of silicon melt in large crucibles using the conventional CZ method. Magnetic field-applied CZ (MCZ) is one solution to control the convection of Si melt. There are several kinds of MCZ categorized by magnetic-field direction: horizontal (HMCZ), vertical (VMCZ), Cusp MCZ; and several types of magnets categorized by the magnetic-field generation method (electroconductive and superconductive). In this paper, out-lines of CZ production for single-crystal silicon, MCZ equipment and MCZ production are reviewed.

Journal

Citations (2)*help

See more

References(23)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top