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Double-Pulsed Green Laser Annealing Tbchnologies
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- KUDO Toshio
- Sumitomo Heavy Industries Ltd, Research & Developlmentr
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- YAMAZAKI Kazunori
- Sumitomo Heavy Industries Ltd, Research & Developlmentr
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- TSUNEMI Akira
- Sumitomo Heavy Industries Ltd, Electro-Mechanical System Diwision
Bibliographic Information
- Other Title
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- ダブルパルスグリーンレーザーアニール技術
- ダブルパルスグリーンレーザーアニール技術--高品質ポリシリコン薄膜形成
- ダブルパルスグリーンレーザーアニール ギジュツ コウヒンシツ ポリシリコン ハクマク ケイセイ
- Formation of High-Quality Poly-Si Thin Films
- 高品質ポリシリコン薄膜形成
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Description
The advanced lateral crystal growth (ALCG) process developed with the double-pulsed green laser annealing system enabled Si grains to be grown laterally and continuously through a step scan of a line beam in the same way as conventional excimer laser annealing (ELA). The field effect mobility of n-channel ALCG-SiTFTs for a current parallel to grain boundaries reaches a high level of 600 cm2/Vs and the strong temperature dependence of the mobility is close to that of single crystal MOS transistors. The 10μm-wide ultra fine beams up to 75 mm in length for the next generation p-SiTFT and up to 150 mm in length for OLED, applied to massproduction machines, were developed by using the beam delivery optics system in conjunction with the optical technique spatially combining multiple laser beams.
Journal
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- The Review of Laser Engineering
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The Review of Laser Engineering 34 (10), 698-703, 2006
The Laser Society of Japan
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Details 詳細情報について
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- CRID
- 1390001204645441792
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- NII Article ID
- 10018312224
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- NII Book ID
- AN00255326
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- COI
- 1:CAS:528:DC%2BD28Xht1emsrnN
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- ISSN
- 13496603
- 03870200
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- NDL BIB ID
- 8546820
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed