極端紫外線リソグラフィ技術の概要

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書誌事項

タイトル別名
  • An Introduction to Extreme-Ultraviolet Lithography
  • キョクタン シガイセン リソグラフィ ギジュツ ノ ガイヨウ

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説明

Extreme-ultraviolet lithography (EUVL) provides high resolution using 13.5nm light. It is the most promising technology for fabricating semiconductor devices at the hp 32-nm scale and smaller. However the short wavelength light causes some technical issues, such as high-power EUV light source, precise aspherical multilayered mirror, precise exposure system, low defect multi-layered mirror, high resolution resist and so on. The technology development is advanced in the project in each worldwide base. As a result, it has been advanced greatly in these ten years. Now, full field EUVL exposure tools are available, and semiconductor devices are demonstrated to be fabricated. In this article, we describe the current technical progress in EUV Lithography.

収録刊行物

  • レーザー研究

    レーザー研究 36 (11), 673-683, 2008

    一般社団法人 レーザー学会

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