Topical Papers on Microchip Lasers and Applications. Optimization of Intracavity-Doubled Nd:YVO4 Lasers End-Pumped by High-Brightness Laser Diodes.

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  • SHEN Deyuan
    <I>Institute for Laser Science, University of Electro-Communications</I>
  • SONG Jie
    <I>Institute for Laser Science, University of Electro-Communications</I>
  • UEDA Kenichi
    <I>Institute for Laser Science, University of Electro-Communications</I>

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  • Optimization of Intracavity-Doubled Nd:YVO4 Lasers End-Pumped by High-Brightness Laser Diodes
  • Optimization of Intracavity-Doubled Nd

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Abstract

In this paper, we report the results of analytical and experimental studies of the characteristics of a high-brightness laser-diode end-pumped Nd: YVO4/KTP laser. A simple model was developed to optimize the cavity parameters and to estimate the green output power of intracavity-frequency-doubled lasers. Using a 1-W high-brightness laser-diode as the pump source, high-efficiency operation was realized based on the optimized cavity design. The second-harmonic output power at 532 nm was measured to be 286.5 mW at an incident pump power of 881.4 mW, corresponding to an optical-to-optical efficiency of 32.5 %.

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