リソグラフィにおけるレーザーを用いた計測技術

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タイトル別名
  • Metrological Technologies Using Laser in Semiconductor Lithography.
  • リソグラフィ ニ オケル レーザー オ モチイタ ケイソク ギジュツ

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抄録

The design rule of semiconductor devices are rapidly shrinking and its densities are increasing. It was 1.2 μmin mid-1980's, and became 0.5 μm in early 1990 and the devices of 0.25 μm design rule are now produced. The lithography technology plays an important role in the trend of device shrinking and density increasing. The development of lithography technology is always supported by the metrology using laser beam. The lasertechnology, so far, overwhelmed the severe requirements of the accurate lithography. The laser technologiesin lithography are classified into three categories. They are the overlay measurement, the critical dimensionmeasurement and the defect inspection. The overlay metrology consists of the absolute placement andalignment measurement. The principles and the example of the typical systems are introduced.

収録刊行物

  • レーザー研究

    レーザー研究 26 (6), 433-437, 1998

    一般社団法人 レーザー学会

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