書誌事項
- タイトル別名
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- GaN-Based Surface-Emitting Lasers Using Micro-Facets Fabricated by Selective-Area Epitaxy
- センタク セイチョウ マイクロ ファセット オ モチイタ GaNケイ メンハッコウガタ レーザー
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GaN microfacets have been grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and applied to GaN-based surface-emitting lasers. The crystal orientation of the microfacets was strictly controlled by the shapes of the mask-openings and growth conditions so that vertical and inclined microfacets were obtained. Hexagonal microprisms (HMPs) of GaN with 5-50μm in diameters have extremely smooth vertical side walls of GaN {10 1 0} microfacets. These GaN HMPs lase by optical pumping and have the inscribed hexagonal optical paths. Additionally, GaN-based horizontal cavity surface-emitting lasers (HCSELs) were successfully fabricated. The GaN-based HCSELs have Fabry-Perot cavity and outer micromirrors, which consist of SA-MOVPE grown {11 2 0} vertical and {11 2 2} inclined microfacets, and lased at room temperature by pulsed current injection. The laser beam emitted laterally from a Fabry-Perot cavity {11 2 0} vertical micromirror is reflected by a {11 2 2} inclined outer micromirror so as to be directed upward. The GaN-based HCSEL has a current-confining structure because the incorporation probability of p-type dopants (Mg) is strongly influenced by facet orientation (growth direction).
収録刊行物
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- レーザー研究
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レーザー研究 35 (2), 79-85, 2007
一般社団法人 レーザー学会
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詳細情報 詳細情報について
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- CRID
- 1390001204648496256
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- NII論文ID
- 10018544469
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- NII書誌ID
- AN00255326
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- ISSN
- 13496603
- 03870200
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- NDL書誌ID
- 8712098
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可
