書誌事項
- タイトル別名
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- High di/dt Switching Characteristics of a SiC Schottky Barrier Diode
- SiC ショットキーバリアダイオード ノ コウdi dt スイッチング トクセイ
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説明
High di/dt switching characteristics of a commercially available silicon carbide schottky barrier diode (SiC-SBD) has been experimentally evaluated in the various di/dt values of 300 A/μs to 2500 A/μs range. Diode voltage waveforms, diode current waveforms, diode stored charges, and diode turn-off losses have been theoretically analyzed. The stored charge and the diode turn-off loss are independent of the forward current value, the di/dt value, and the junction temperature. It is shown that the switching behavior of the SiC-SBD can be expressed a simple variable capacitor, the capacitance of which depends on the reverse bias voltage. The switching characteristics of the SiC-SBD also have been compared to those of a commercially available ultra-fast silicon pn diode (Si-PND). The SiC-SBD has extremely low reverse current and low stored charge compared to those of the Si-PND. The SiC-SBD can reduce the IGBT turn-on loss compared to the Si-PND especially in the high di/dt operation.
収録刊行物
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- 電気学会論文誌Ｄ（産業応用部門誌）
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電気学会論文誌Ｄ（産業応用部門誌） 124 (9), 917-923, 2004
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204656695680
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- NII論文ID
- 10013538314
- 20000486525
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- NII書誌ID
- AN10012320
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- BIBCODE
- 2004IJTIA.124..917T
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- ISSN
- 13488163
- 09136339
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- NDL書誌ID
- 7077955
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- 本文言語コード
- ja
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- 資料種別
- journal article
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- NDLサーチ
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- 使用不可