半導体用高純度フッ化水素酸

遠山 一郎, 中村 富三, 加藤 明彦, 佐藤 清

doi:10.2116/bunsekikagaku.17.1087

半導体用高純度フッ化水素酸

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遠山一郎

大阪工業技術試験所
中村富三

大阪工業技術試験所
加藤明彦

大阪工業技術試験所
佐藤清

四天王寺女子短期大学

書誌事項

タイトル別名

High purity hydrofluoric acid for semiconductor.
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説明

A preparation of high purity hydrofluoric acid for semiconductor was studied, on (1) a method of fractional distillation of a highly concentrated hydrofluoric acid by a new rectifying column made of fluorine resin, and (2) fates of phosphate and arsenic in the course of purification and analysis which were followed by the use of ³²P and ⁷⁴As.<BR>As the result, high purity hydrofluoric acid (concentration 51%; fluosilicic acid 0.0004%; phosphate 0.000005%; arsenic 0.000001%) was obtained with 80% yield by a distillation of 1 kg of raw 68% hydrofluoric acid (fluosilicic acid 0.2%; phosphate 0.003%; arsenic 0.002%; sulfate 0.01%) at 2425°C for 24 hours with 50 g of (NH₄)₂S₂O₈, 20 g of Ag₂SO₄ and 50 g of Na₂CO₃.<BR>Repeated distillations gave an acid almost free from phosphate and arsenic.