シリコンウエハ研削面の真直度に関する研究　　ウエハ自転研削法に関する研究　ＩＩ

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タイトル別名
  • Study on straightness of ground surface of silicon wafer - Studies on wafer rotation grinding method. (2nd report).
  • ウエハ ジテン ケンサクホウ ニ カンスル ケンキュウ 2 シリコン ウエハ
  • Studies on Wafer Rotation Grinding Method (2nd Report)
  • ウエハ自転研削法に関する研究(第2報)

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抄録

In this paper, the straightness of silicon wafer ground by wafer rotation grinding method is discussed, which is caused by the parallel error between grinding wheel axis and rotary table axis. The parallel error is defined by two angles, that is inclination angle θ and direction angle α. And the effect of the parallel error on the straightness is examined theoretically and experimentally. The main results obtained are as follows: (1) The profile and the straightness of the ground surface are largely effected by the direction angle α. (2) The direction angle al exists which makes the straightness minimum. (3) Practically, the straightness is maintained in the lowest level when the direction in which the thermal deformation of surface grinder is maximum is coincide with the direction angle α=0° or α=180°. (4) The straightness is proportional to the inclination angle θ. (5) In this experiment, the variation of the straightness was maintained less than ±1 μm at α_??_180° when the grinding operation was continued in several days using an ordinary surface grinder.

収録刊行物

  • 精密工学会誌

    精密工学会誌 53 (8), 1265-1270, 1987

    公益社団法人 精密工学会

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