The Development of AC Electric Field Assisted Polishing for Silicon Carbide Substrates with Control of Abrasive Behavior

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  • 炭化ケイ素基板研磨のための電界砥粒分布制御研磨に関する研究
  • 炭化ケイ素基板研磨のための電界砥粒分布制御研磨に関する研究 : 電界による研磨率向上メカニズムの検討
  • タンカ ケイソ キバン ケンマ ノ タメ ノ デンカイトリュウ ブンプ セイギョ ケンマ ニ カンスル ケンキュウ : デンカイ ニ ヨル ケンマリツ コウジョウ メカニズム ノ ケントウ
  • —Clarification of Improvement Mechanism for Polishing Rate with Electric Field—
  • —電界による研磨率向上メカニズムの検討—

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Authors have been developed a novel polishing method for silicon carbide substrate using functional fluids which are dispersed abrasives with silicone fluid. Behavior of abrasive can be controlled with electric field. In this report, we have confirmed the improved polishing rate in proportion to electric field strength, and the change for slurry characteristics by the solvent viscosity. And, we considered the improvement mechanism factor for polishing rate using controlled slurry under AC electric field in viewpoints of the number of active abrasives in polishing and the electric attractive pressure between polishing pad and workpiece.

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