強磁性ナノ粒子層を介した二重トンネル接合のTMR
書誌事項
- タイトル別名
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- Tunnel Magnetoresistance in Double Junctions with layered Ferromagnetic Nanoparticles.
- キョウジセイ ナノ リュウシソウ オ カイシタ 2ジュウ トンネル セツゴウ ノ TMR
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説明
Tunnel magnetoresistance (TMR) in double tunnel junctions with layered ferromagnetic nanoparticles was investigated. The sample comprised two ferromagnetic electrodes (CoFe/Fe) separated by an Al2O3 insulating layer in which a layer of Co80Pt20 nanoparticles was embedded. The nanoparticles were ellipsoidal with an average diameter of 3.7 nm, and composed a well-defined layer. The TMR and the tunnel resistance of the sample showed steep increases around 100 K, and weak temperature dependence below 50 K. The zero-bias TMR rose from 1 % at room temperature to 18 % at 20 K. Below 20 K, we observed magnetoresistance oscillation with respect to the bias voltage. The observed TMR oscillations, with periods of 1.6 and 15 mV, accompanied oscillations of the conductance. We consider that the conductance oscillations may originate from the coexistence of the discrete energy level of the nanoparticles and the discrete electrostatic potential due to the single-electron charging effect.
収録刊行物
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- 日本応用磁気学会誌
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日本応用磁気学会誌 24 (4-2), 575-578, 2000
公益社団法人 日本磁気学会
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詳細情報 詳細情報について
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- CRID
- 1390001205090963840
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- NII論文ID
- 110002810737
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- NII書誌ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
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- NDL書誌ID
- 5349708
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可