（１１１）配向ＺｎＦｅ２Ｏ４下地膜上に堆積したＢａＭ薄膜の微細構造
書誌事項
- タイトル別名
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- Microstructure of BaM Thin fIlms Deposited on (111) Oriented ZnFe2O4 Underlayer.
- 111 ハイコウ ZnFe2O4 シタジ マク ジョウ ニ タイセキ シタ BaM ハクマク ノ ビサイ コウゾウ
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抄録
The microstructure of BaM thin films, sputter-deposited using on alternate layer deposition technique on both a c-axis oriented ZnO underlayer and a (111) oriented ZnFe2O4 underlayer, was investigated using a high-resolution transmission electron microscope (HRTEM). When the films were deposited on the ZnO underlayer, the film had a layered structure of BaM (c-axis orientation) / Ba-Zn-Fe-O / ZnFe2O4 ((111) orientation) / Ba-Zn-Fe-O / Zn-Si-O/SiO2 / Si. This suggests that the BaM layer was formed after the formation of the layered structure of Ba-Zn-Fe-O / ZnFe2O4 ((111) orientation) / Ba-Zn-Fe-O / Zn-Si-O / SiO2 / Si. On the other hand, when films were deposited on the (111) oriented ZnFe2O4 underlayer, the BaM layer grew epitaxially on the (111) plane of the ZnFe2O4 underlayer, and the formation of transition layers was not observed. These results suggest that the diffusions of Ba, Fe, and Zn ions between the BaM layer and ZnO or Ba-Zn-Fe-O layer occurred easily but was completely suppressed in the ZnFe2O4 layer, which resulted in formation of a ZnFe2O4 layer that was sandwiched between the Ba-Zn-Fe-O layers when BaM films were deposited on a ZnO underlayer.
収録刊行物
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- 日本応用磁気学会誌
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日本応用磁気学会誌 24 (4-2), 523-526, 2000
公益社団法人 日本磁気学会
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詳細情報 詳細情報について
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- CRID
- 1390001205091008000
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- NII論文ID
- 110002810724
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- NII書誌ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
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- NDL書誌ID
- 5349415
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可