Room-Temperature Extra-huge Magnetoresistance Effect in MnSb Granular Films.
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- Akinaga H.
- JRCAT-NAIR
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- Mizuguchi M.
- JRCAT-NAIR
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- Ono K.
- School of Engineering, The University of Tokyo
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- Oshima M.
- School of Engineering, The University of Tokyo
Bibliographic Information
- Other Title
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- MnSbグラニュラー構造における室温超巨大磁気抵抗効果
- MnSb グラニュラー コウゾウ ニ オケル シツオン チョウキョダイ ジキ テイコウ コウカ
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Abstract
A huge positive magnetoresistance effect in a relatively low magnetic field (less than 0.5 T) at room temperature was discovered in MnSb granular films. A granular film consisting of nano-scale MnSb clusters was grown on a sulfur-passivated GaAs(001) substrate by molecular beam epitaxy, then covered with an Sb thin layer. The granular film shows magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, a more than 1000 percent change in the current, which we term a magnetoresistive switch, is driven by the magnetoresistance effect. A possible mechanism for the magnetoresistive switch effect is discussed.
Journal
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- Journal of the Magnetics Society of Japan
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Journal of the Magnetics Society of Japan 24 (4-2), 451-454, 2000
The Magnetics Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205091046656
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- NII Article ID
- 110002810706
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- NII Book ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
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- NDL BIB ID
- 5349119
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- Abstract License Flag
- Disallowed