Formation of MnAs Dots on S-Passivated GaAs(100) Substrates
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- Ono K.
- School of Engineering, The University of Tokyo
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- Mizuguchi M.
- School of Engineering, The University of Tokyo
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- Uragami T.
- School of Engineering, The University of Tokyo
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- Mano T.
- School of Engineering, The University of Tokyo
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- Fujioka H.
- School of Engineering, The University of Tokyo
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- Oshima M.
- School of Engineering, The University of Tokyo
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- Tanaka M.
- School of Engineering, The University of Tokyo
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- Watanabe Y.
- NTT Laboratories
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Abstract
We report the formation of nanosize ferromagnetic MnAs dots on S-passivated GaAs by molecular beam epitaxy. The structural and magnetic properties of the dots have been characterized by high resolution scanning electron microscopy, and superconducting quantum interference device magnetometer. The average size and the density of these MnAs dots were 16.3nm and 2.3×1010/cm3 respectively. These dots show ferromagnetism at low temperature and the Curie temperature is lower than the bulk value.
Journal
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- Journal of the Magnetics Society of Japan
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Journal of the Magnetics Society of Japan 23 (1_2), 691-693, 1999
The Magnetics Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205092186368
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- NII Article ID
- 110002810379
- 130004478413
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- NII Book ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
- http://id.crossref.org/issn/02850192
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- NDL BIB ID
- 4647072
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- Abstract License Flag
- Disallowed
