Room-Temperature Photo-induced MR in MnSb : GaAs Granular Thin Films

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  • Mizuguchi M.
    Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR) Graduate School of Engineering, The University of Tokyo
  • Akinaga H.
    Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR)
  • Ono K.
    Graduate School of Engineering, The University of Tokyo
  • Oshima M.
    Graduate School of Engineering, The University of Tokyo

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Other Title
  • MnSb：GaAsグラニュラー薄膜の室温光誘起巨大磁気抵抗効果
  • MnSb GaAs グラニュラー ハクマク ノ シツオン ヒカリ ユウキ キョダイ ジキ テイコウ コウカ

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Abstract

Nano-size MnSb clusters with a nominal thickness of 3 ML were grown on GaAs(111)B substrates by molecular beam epitaxy. The films were capped with GaAs, and the magnetoresistance effect was investigated at room temperature. A large positive magnetoresistance effect of over 50% was observed. The dependency on the sweep rate of magnetic field and an effect of Cr-doping in GaAs capping layers were investigated. The photoinduced MR effect was also observed under laser-irradiation with a photon energy above the band gap of GaAs. It is shown that these phenomena can be attributed to the enhancement of the conductivity by photogenerated carriers.

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