強磁性トンネル接合における絶縁障壁と磁気抵抗 (<特集>多層膜・人工格子・グラニューラー)
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- 手束 展規
- 東北大学工学部応用物理学科
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- 安藤 康夫
- 東北大学工学部応用物理学科
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- 宮崎 照宣
- 東北大学工学部応用物理学科
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- Tompkins H. G.
- Phoenix Corporate Research Lab., MOTOROLA, Inc.
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- Tehrani S.
- Phoenix Corporate Research Lab., MOTOROLA, Inc.
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- Goronkin H.
- Phoenix Corporate Research Lab., MOTOROLA, Inc.
書誌事項
- タイトル別名
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- Relationship between the Barrier and Magnetoresistance Effect in Ferromagnetic Tunneling Junctions
- 強磁性トンネル接合における絶縁障壁と磁気抵抗
- キョウジセイ トンネル セツゴウ ニ オケル ゼツエン ショウヘキ ト ジキ
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The dependence of the tunneling magnetoresistive effect on the barrier height was investigated. The magnitude of the barrier height increased with increasing aluminum oxidation temperature and time from 0.3 to 2.3 eV in Fe/Al oxide/Fe junctions. However, those values are smaller than those reported for an Al2O3 barrier. A possible reason for this is that the barrier is not pure Al2O3, but AIOx, or another oxide created by interface mixing between Fe and Al oxide. On the other hand, the magnetoresistance ratio in these junctions varied up to 18% at room temperature and up to 18% at 4.2 K. The dependence of the magnetoresistance ratio at 4.2 K on the barrier height is roughly the same as predicted by Slonczewski's theory. This result shows that the effective spin polarization of ferromagnetic electrodes changes according to the barrier height.
収録刊行物
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- 日本応用磁気学会誌
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日本応用磁気学会誌 21 (4_2), 493-496, 1997
公益社団法人 日本磁気学会
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詳細情報 詳細情報について
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- CRID
- 1390001205093981568
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- NII論文ID
- 110002809918
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- NII書誌ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
- http://id.crossref.org/issn/02850192
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- NDL書誌ID
- 4192970
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 使用不可