64*64 Pixel two-layer structure InSb-IRCCD.

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  • ６４×６４画素２層構造ＩｎＳｂ‐ＩＲＣＣＤ
  • 64 64 ガソ 2ソウ コウゾウ InSb-IRCCD

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Abstract

A 64×64 pixel InSb-IRCCD with a two-layer structure is developed. It is constructed with a back-illuminated InSb p+n photodiode array and a buried p-channel Si-CCD. The photodiode array was manufactured using ion-implantation and anodic oxide/sputtered A12O3 double layer passivation processes, by which R0A values of more than 1×105 Ωcm2 were obtained.<BR>The photodiode array, polished to 20μm thickness, and the CCD are interconnected by a special In-bump technique involving electroplating and reforming to conical shapes, which assures complete electrical connections.<BR>Signal charges in the CCD storage gate containing the background ingredient, are par titioned to two parts or skimmed. By these techniques, CCD gate capacities are minimized. The output signals are corrected to form the IR image.<BR>Good system linearities, where γ=1.00±0.01, and excellent responses, D*λpeak=6.0×1011 cm Hz1/2 w-1 and NETD=0.05-0.06 deg, have been obtained. Crosstalk was decreased by thinning the photodiode and MTFs were improved.

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