A high Sensitivity 1/4-type (Diagonal 4.5mm) 360 k-pixel FT-CCD Image Sensor with a Single-layer Poly-silicon Electrode.

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  • Okada Yoshihiro
    MOS-LSI Division, Semiconductor Company, SANYO Electric Corporation
  • Ohtsuru Yuzo
    MOS-LSI Division, Semiconductor Company, SANYO Electric Corporation
  • Izawa Shin'ichiro
    MOS-LSI Division, Semiconductor Company, SANYO Electric Corporation
  • Taino Nobuhiro
    MOS-LSI Division, Semiconductor Company, SANYO Electric Corporation
  • Hamada Minoru
    MOS-LSI Division, Semiconductor Company, SANYO Electric Corporation

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  • 単層ポリシリコン電極を採用した高感度１／４型（対角４．５ｍｍ）３６万画素ＦＴ‐ＣＣＤイメージセンサ
  • タンソウ ポリシリコン デンキョク オ サイヨウ シタ コウカンド 1 4ガタ タイカク 4 5mm 36マン ガソ FT CCD イメージセンサ

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Abstract

We experimentally fabricated a frame transfer CCD (FT-CCD) image sensor for Recommendation ITU-R BT, 601 with a single-layer poly-silicon electrode structure.We set the gap to 0.45 pm to balance charge-handling capability against optical sensitivity. We optimized the membrane structure to improve optical sensitivity. We sandwiched the poly-silicon gate between two silicon-nitride layers with a high refractive index to suppress reflection on the poly-silicon surface. The sensitivity was improved 40% with this structure. An FT-CCD image sensor constructed using this new structure is very simple and has high performance.

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