Fabrication of Electret Using Soft X-ray Irradiation for Silicon Microphone
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- Goto Masahide
- NHK Science & Technology Research Laboratories
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- Hagiwara Kei
- NHK Science & Technology Research Laboratories
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- Iguchi Yoshinori
- NHK Engineering Services, Inc.
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- Yasuno Yoshinobu
- Kobayasi Institute of Physical Research
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- Kodama Hidekazu
- Kobayasi Institute of Physical Research
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- Kidokoro Kenichi
- RION Co., Ltd.
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- Tajima Toshifumi
- NHK Science & Technology Research Laboratories
Bibliographic Information
- Other Title
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- 軟X線照射によるシリコンマイクロホン用エレクトレットの作製
- ナンXセン ショウシャ ニ ヨル シリコンマイクロホンヨウ エレクトレット ノ サクセイ
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Abstract
To develop an ultraminiature high-performance microphone for the next generation, we have been studying a silicon microphone. We previously fabricated a single-crystalline silicon microphone using original MEMS technology. The prototype microphone showed excellent acoustic characteristics such as high sensitivity and wide frequency range. Aiming at low-voltage operation, we have recently developed a novel electret charging technique using soft X-ray irradiation. This technique leads to removing the 48-V bias voltage. Experimental results show that an internal inorganic dielectric film keeps electric charges and has excellent heat resistance. This technique exhibits promise for developing a low-voltage operation silicon microphone for purposes ranging from broadcasting to consumer use.
Journal
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- The Journal of The Institute of Image Information and Television Engineers
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The Journal of The Institute of Image Information and Television Engineers 64 (7), 1003-1006, 2010
The Institute of Image Information and Television Engineers
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Details 詳細情報について
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- CRID
- 1390001205126557312
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- NII Article ID
- 10030702362
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- NII Book ID
- AN10588970
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- ISSN
- 18816908
- 13426907
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- NDL BIB ID
- 10763043
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed