インジウムニトリルアセチルアセトナートの熱分解により形成されたＩｎ２Ｏ３系透明導電膜の特性

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タイトル別名
  • Characteristics of Transparent Conductive In<sub>2</sub>O<sub>3</sub> Films Prepared by Thermal Decomposition of Indium Nitrile Acetylacetonate
  • インジウムニトリルアセチルアセトナート ノ ネツ ブンカイ ニ ヨリ ケイセイ

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説明

Indium tin oxide (ITO) conductive films were prepared on glass substrates by thermal decomposition of organometallic solution. The solution consists of a homogeneously dissolved indium/tin nitrile acetylacetonate and acetone. The solution was coated on a glass substrate, and then decomposed to yield a thin adherent film of ITO at temperatures ranging between 350°-600°C in air.<br>Various properties of the films were measured: etching rate of the films by HCl solution, mechanical strength, chemical stability, electrical resistivity, carrier concentration and mobility of the films. The films containing 5-15wt% of SnO2 prepared by thermal decomposition at temperatures above 500°C were found to have a large etching rate, excellent resistance against rubbing with a rubber and stability in NaOH solution. Carrier concentration and mobility of the films increased with the heating temperature. Carrier concentration increased and mobility decreased with the increase of the content of SnO2 in the film. The electrical resistivity of the films had a minimum value of 1.3×10-3ohm⋅cm at the 5wt% of SnO2 content. Carrier concentration and mobility of the film was typically 1.3×1020cm-3 and 35cm2⋅V-1⋅s-1 at room temperature, respectively.

収録刊行物

  • 窯業協會誌

    窯業協會誌 90 (1040), 157-163, 1982

    公益社団法人 日本セラミックス協会

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