Crystallization of Amorphous (Pb, La)(Zr, Ti)O3 Thin Film and Its Electrical Properties.

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  • KOBUNE Masafumi
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
  • MATSUURA Osamu
    Schools of Material Engineering, Graduate School of Engineering, Himeji Institute of Technology
  • MATSUZAKI Tomoaki
    Schools of Material Engineering, Graduate School of Engineering, Himeji Institute of Technology
  • SAWADA Tatsuya
    Schools of Material Engineering, Graduate School of Engineering, Himeji Institute of Technology
  • MINESHIGE Atsushi
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
  • FUJII Satoshi
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology

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  • アモルファス (Pb, La)(Zr, Ti)O<sub>3</sub>薄膜の結晶化とその電気特性

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Dense amorphous PLZT films with composition (Pb0.925La0.075) (Zr0.4Ti0.6)O3 were deposited on Pt/MgO (100) substrates by rf-magnetron sputtering without heating the substrates and were subsequently crystallized by postdeposition annealing. The optimum conditions in the two-step annealing process to crystallize the amorphous PLZT films were investigated. The post-deposition-annealed films showed excellent crystallinity and c-axis orientation when the amorphous PLZT films were annealed in an oxygen flow at a soaking temperature for the initial nucleation process of T1=300°C, a temperature for crystal growth process of T2=750°C, and the T2-soaking time of t2=60min. Conventional Pt/PLZT/Pt capacitors were fabricated by forming Pt top electrodes on crystallized 300-nm-thick PLZT films. The remanent polarization and the coercive field of the present capacitors, which indicated almost symmetric P-E hysteresis loops, were 2Pr≅30μC/cm2 and 2Ec≅90kV/cm, respectively. The high-endurance PLZT capacitors with excellent ferroelectric properties produced by the present optimized crystallization have great potential for application to nonvolatile memory devices.

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