-
- CHEN Jen-Sue
- Department of Materials Science and Engineering, National Cheng-Kung University
-
- LO Wen-Tse
- Department of Materials Science and Engineering, National Cheng-Kung University
-
- HUANG Jow-Lay
- Department of Materials Science and Engineering, National Cheng-Kung University
書誌事項
- タイトル別名
-
- Gas Sensitivity of Reactively Sputtered SnO2 Films.
この論文をさがす
抄録
Tin oxide (SnO2) films were deposited by r. f. (Radio Frequency) magnetron reactive sputtering and subsequently annealed at 900°C. The effect of deposition parameters and Pt catalyst content on phases and gas sensitivity of the SnO2 films were investigated. It was shown that the amorphous phase disappeared, polycrystalline SnO2 formed after heat treatment, and the crystallinity of SnO2 reduced with decreasing oxygen flow rate. The gas sensitivity of tin oxide films deposited at 50 sccm was consistently higher than that of 25 sccm and invariably increased with the CO concentration. The sensitivity of Pt doped SnO2 films was, however, much superior to that of undoped samples. In addition, the sensitivity consistently decreased with the amount of Pt.
収録刊行物
-
- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
-
Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 110 (1277), 18-21, 2002
公益社団法人 日本セラミックス協会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001205247644672
-
- NII論文ID
- 110002291543
-
- NII書誌ID
- AN10040326
-
- ISSN
- 18821022
- 09145400
-
- NDL書誌ID
- 6026332
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可