Preparation of GaN Crystals by a Reaction of Ga2O3 with Li3N

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  • MABUCHI Akira
    Environmental and Renewable Energy System Division, Graduate School of Engineering, Gifu University
  • IWASE Yuriko
    Environmental and Renewable Energy System Division, Graduate School of Engineering, Gifu University
  • YASUDA Eiji
    Environmental and Renewable Energy System Division, Graduate School of Engineering, Gifu University
  • SUGIURA Takashi
    Environmental and Renewable Energy System Division, Graduate School of Engineering, Gifu University
  • MINOURA Hideki
    Environmental and Renewable Energy System Division, Graduate School of Engineering, Gifu University

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Other Title
  • 窒化リチウムと酸化ガリウムとの反応によるＧａＮ結晶の作製
  • チッカ リチウム ト サンカ ガリウム ト ノ ハンノウ ニ ヨル GaN ケッショウ ノ サクセイ

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A novel synthetic route to preparation of GaN particles from Ga2O3 and Li3N under milder condition than other conventional methods has been explored. We have found that a reaction of Ga2O3 and Li3N at temperatures ranging from 500°C and 700°C in nitrogen atmosphere of 0.4 MPa yields a mixture of GaN and Li2O powder, from which Li2O is subsequently removed by dissolving the reaction products in water. The GaN single crystals prepared by this method were hexagonal wurtzite type, no cubic phase was found. The crystal sizes were about 1 μm. This technique seems to have applicability also for the synthesis of other nitride particles.<br>

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