'Tg-.DELTA. Rule' Applied to Semiconducting Vanadate Glasses Containing Different Amounts of Fe2O3.

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  • NISHIDA Tetsuaki
    Department of Chemistry, Faculty of Science, Kyushu University
  • IWASHITA Jun
    Department of Chemistry, Faculty of Science, Kyushu University
  • KUBUKI Shiro
    Department of Chemical and Biological Engineering, Ube National College of Technology

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Other Title
  • 鉄濃度の異なる半導性バナジン酸塩ガラスにおける‘<i>T</i><sub>g</sub>-<i>Δ</i>則’
  • 'Tg-Δ Rule'Applied to Semiconducting Vanadate Glassess Containing Different Amounts of Fe2O3
  • Tg デルタ Rule Applied to Semiconducting Vanadate Glassess Containing Different Amounts of Fe2O3

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Abstract

‘Tg-Δ rule’, i.e., a linear relationship between the glass transition temperature (Tg) and the Mössbauer quadrupole splitting (Δ), is applied to semiconducting 10K2O⋅(90-x)V2O5⋅xFe2O3 and 25K2O⋅(75-x)V2O5⋅xFe2O3 glasses (henceforth denominated glass A and B, respectively). Slopes of the straight lines obtained from the plot of Tg vs. Δ (i.e., 685 and 690°C (mm·s-1)-1 for glass A and glass B, respectively) imply that the Fe(III) atoms substitute tetrahedral V(IV) or V(V) atoms and play a role of network former. Both Tg and Δ values increase with the Fe2O3 content, suggesting that Fe(III) causes an increase in the distortion of VO4 tetrahedra. Fourier-transform infrared (FT-IR) spectra prove that Fe(III) does not essentially change the network structure. These experimental results are discussed together with the ‘Tg-Δ rule’ that was recently applied to aluminate, gallate and borosilicate glasses.

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