高温気相反応による炭化珪素の結晶成長

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書誌事項

タイトル別名
  • Crystal Growth of Silicon Carbide by Vapor Phase Reaction at High Temperature
  • コウオン キソウ ハンノウ ニ ヨル タンカ ケイソ ノ ケッショウ セイチョウ(カガク ジョウチャクホウ(Chemical vapor deposition)ニ カンスル キソテキ ケンキュウ-2-)
  • Fundamental Studies on Chemical Vapor Deposition (2)
  • 化学蒸着法 (Chemical vapor deposition) に関する基礎的研究 (第2報)

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説明

In this report, the growth of β-SiC crystal by gaseous phase reactions between silicon tetrachloride and toluene with hydrogen used as a carrier gas on the surface of a heated graphite substrate at high temperatures was investigated.<br>The deposits was prepared under the condition in which the molar ratio of silicon tetrachloride to toluene was maintained between 4:1 and 1.3:1, on a graphite substrate heated by H. F. induction furnace at the temperature up to 1500°C. Several variations of deposition and crystal forms of β-SiC relating to the gas flow rate and molar ratio of silicon tetrachloride to toluene were observed in this experiment.<br>The beta-silicon carbide deposits which grew in an atmosphere with the proportion of 3.5:1 to 2.5:1 of silicon tetrachloride to toluene, consisted of transparent yellow and prism shaped crystals and it was found that the decrease in the molar ratio from 2.0 resulted in the formation of colorless and triangular crystals.<br>The characteristics of these deposits by vapor phase reaction method at high temperatures were determined by optical observations and X-ray powder diffraction analysis.

収録刊行物

  • 窯業協會誌

    窯業協會誌 75 (859), 74-77, 1967

    公益社団法人 日本セラミックス協会

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