書誌事項
- タイトル別名
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- Special Issue Ceramics Integration. Epitaxial Growth of ZnO/AlN Heterostructures on Sapphire and Si Substrates.
- Epitaxial Growth of ZnO/AlN Heterostructures on Sapphire and Si Substrates
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抄録
Epitaxial heterostructures of ZnO/AlN have been fabricated on both sapphire (0001) and Si (111) substrates with a 3C-SiC buffer. AlN underlayers with heterostructures were epitaxially grown by radio-frequency (RF) plasma-assisted molecular beam epitaxy (MBE). ZnO top layers were grown by direct-current (DC) sputtering using a Zn target and oxygen atmosphere. Analysis using X-ray diffraction, reflection highenergy electron diffraction (RHEED), and transmission electron microscopy (TEM) showed that both ZnO and AlN films have a monocrystalline wurtzite structure with epitaxial relationships of ZnO[0001]//AlN [0001]//sapphire[0001] and ZnO[0001]//AlN[0001]//3C-SiC[111]//Si[111] along the growth direction, ZnO[1120]//AlN[1120]//sapphire[1120] and ZnO[1120]//AlN[1120]//3C-SiC[110]//Si[110] within the growth plane, respectively. The successful growth of epitaxial ZnO/AlN films on sapphire and Si substrates demonstrates the feasibility of integrated devices consisting of these substrates.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 110 (1281), 343-346, 2002
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205249816960
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- NII論文ID
- 110002291607
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- NII書誌ID
- AN10040326
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- COI
- 1:CAS:528:DC%2BD38XksFelurs%3D
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 6154159
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可