Electrical Resistivity of ZnO Ceramics Doped with Sm<sub>2</sub>O<sub>3</sub>

DOI Web Site Web Site
  • RI Seigen
    Research Laboratory of Engineering Materials, Tokyo Institute of Technology
  • HAMANO Kenya
    Research Laboratory of Engineering Materials, Tokyo Institute of Technology
  • NAKAGAWA Zenbe-e
    Research Laboratory of Engineering Materials, Tokyo Institute of Technology

Bibliographic Information

Other Title
  • Sm<sub>2</sub>O<sub>3</sub>を添加したZnO焼結体の電気抵抗
  • Sm2O3 オ テンカシタ ZnO ショウケツタイ ノ デンキ テイコウ

Search this article

Abstract

When dc voltage was applied to the fired ZnO specimens of low bulk densities, the current decreased with time for undoped specimens, whereas the current remained unchanged for Sm2O3-doped specimens. The resistivity increased remarkably with decreasing fired density. Using a model for initial sintering and Kaker's cubic model, neck radius between grains was calculated from relative density and grain size of fired specimens. The curve representing relation between resistivity and neck radius consists of two straight lines, and the radius at the cross point of these lines was thought to be equivalent to the Debye length. The Debye length was about 0.31μm and 0.53μm for undoped and Sm2O3-doped ZnO respectively.

Journal

Keywords

Details 詳細情報について

Report a problem

Back to top