Preparation and Electrical Properties of Ba(Ti1-xZrx)O3 Thin Films by Hydrothermal Method.

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  • KAWANO Takafumi
    Inorganic Materials Department, Ube Research Laboratory Corporate Research and Development, Ube Industries, Ltd.
  • HASHIMOTO Kazuo
    Inorganic Materials Department, Ube Research Laboratory Corporate Research and Development, Ube Industries, Ltd.
  • NISHIDA Akio
    Inorganic Materials Department, Ube Research Laboratory Corporate Research and Development, Ube Industries, Ltd.
  • TSUCHIYA Toshio
    Faculty of Industrial Science and Technology, Tokyo University of Science

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  • 水熱合成法によるBa(Ti<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>)O<sub>3</sub>薄膜の作製と電気特性

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Abstract

Ba(Ti1-xZrx)O3 thin films have been synthesized on the titanium substrates at 160°C by hydrothermal method. The surface roughness (Ra) of the film was 0.096μm. The molar ratio of Zr/Ti of the film analyzed by EDS was 0.25/0.75. The film microstructure depended strongly on both starting materials and KOH concentration. The grain size became larger from approximately 0.6 to 1μm with increasing KOH concentration from 1×10-3 to 3.5×10-3mol·m-3 at am aqueous solution of 7.8×10-5mol·m-3. The Ba(Ti0.75Zr0.25)O3 thin film synthesized in an aqueous solution of 7.8×10-5mol·m-3 containing 3.5×10-3mol·m-3 KOH showed a dielectric constant of about 426 and dielectric loss of about 0.077 at 1kHz. The transition point between the ferroelectric and paraelectric phases of the film heat-treated at 300°C for 0.5h was approximately 10°C.

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