ITO膜の高温抵抗率における熱履歴現象

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タイトル別名
  • Thermal Hysteresis of High Temperature Resistivity in Indium-Tin-Oxide Films
  • ITO マク ノ コウオン テイコウリツ ニ オケル ネツ リレキ ゲンショウ

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抄録

Indium-tin-oxide (ITO) films were prepared by the chemical spray pyrolysis method using InCl3⋅6H2O and SnCl4⋅xH2O (x=3-5) as starting materials. The film with a minimum resistivity of 1.23×10-3Ω·cm was obtained for tin doping, Sn/In=5at%. Resistivity of 50nm thick films showed hysteresis phenomena in heat cycles repeated at temperatures between 100° and 500°C in O2 and Ar gases. The hysteresis results were discussed in terms of desorption of H2O from In2O3-H2O complexes, superposing desorption of adsorbed O2 from the films.

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