Electrical Properties of PbTiO<sub>3</sub> Single Crystals Grown from PbO-Cu<sub>2</sub>O Flux Method

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  • FUJII Satoshi
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
  • SUGIE Yosohiro
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
  • KOBUNE Masafumi
    Department of Applied Chemistry, Faculty of Engineering, Himeji Institute of Technology
  • YAMAMOTO Tomihiko
    Daiso Co., Ltd.

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  • PbO-Cu<sub>2</sub>O系フラックスを用いて育成したPbTiO<sub>3</sub>単結晶の電気的性質
  • PbO Cu2Oケイ フラックス オ モチイテ イクセイシタ PbTiO3 タ

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Abstract

The growth of PbTiO3 single crystals from PbO-Cu2O flux method and the electrical properties of the grown single crystals were studied. (1) PbTiO3 crystals grown from a PbO-Cu2O (7wt%) were single crystals, and had a maximum dimension of 4.5×4.5×1.7mm3. (2) All crystals contained less than 0.01wt% Cu ion. Therefore, crystals doped with Cu ion may be showed no variation of the lattice constant. (3) Electrical properties of the crystals were affected by Cu ion. The electrical conductivity of crystals was very low (about 10-12S⋅cm-1) at room temperature. At temperature about 300°C, the current-voltage characteristic curve revealed that the crystal doped with Cu ion was characterized by ohmic and non-ohmic conduction. The critical field strength, EH value, decreased remarkably with increasing temperature.

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